Core lab Details

Focused Ion Beam–Scanning Electron Microscopy (FIB-SEM)

 

Focused Ion Beam–Scanning Electron Microscopy (FIB-SEM) is an advanced dual-beam technique used to investigate the microstructure, surface morphology, and internal features of materials. The JEOL JIB-PS500i combines a high-resolution field emission Scanning Electron Microscope (FE-SEM) with a focused gallium ion beam for precise material removal and imaging. The SEM provides detailed surface and cross-sectional images, while the FIB enables site-specific milling, sectioning, and preparation of electron-transparent specimens for TEM analysis. The system supports advanced sample preparation, structural characterization, and three-dimensional microstructural investigation through sequential milling and imaging. It is widely used in materials science, nanotechnology, semiconductor research, metallurgy, ceramics, battery materials, and failure analysis.

Capabilities

  • High-resolution Scanning Electron Microscopy (SEM) imaging

  • Focused Ion Beam (FIB) milling and precision material processing

  • Site-specific cross-sectional preparation and imaging

  • Ultrathin specimen preparation for TEM and STEM analysis

  • Nanoscale surface morphology and microstructural characterization

  • Three-dimensional microstructural analysis through serial sectioning

  • Grain boundary, interface, and defect investigation

  • Semiconductor device inspection and failure analysis

  • Elemental analysis and mapping using EDS when equipped

  • Applications: Semiconductors, metals, alloys, ceramics, nanomaterials, thin films, coatings, batteries, and advanced functional materials

Facilities

  • Model: JEOL JIB-PS500i

  • Manufacturer: JEOL Ltd.

  • Combined Focused Ion Beam and Field Emission Scanning Electron Microscope (FIB-FESEM)

  • Gallium (Ga) liquid metal ion source for precision milling

  • FIB accelerating voltage range: 0.5–30 kV

  • FIB beam current: 1 pA–100 nA

  • SEM landing voltage range: 0.01–30 kV

  • SEM imaging resolution: 0.7 nm at 15 kV

  • FIB imaging resolution: 3 nm at 30 kV

  • High-resolution Secondary Electron (SE) and Backscattered Electron (BSE) imaging

  • Computer-controlled five-axis motorized specimen stage

  • Automated beam control, imaging, and milling operations

  • Site-specific TEM specimen preparation and cross-sectional analysis

  • Integrated software for image acquisition and microstructural characterization

 

Location                                                            Equipment In-charge

Core Research Facilities                                   Name: Mr. Syed Abrar Hussain

Building 61 LAB# 115                                       Phone: 860-3129

                                                                             E-mail: syed.hussain@kfupm.edu.sa